Search for dissertations about: "technology shift"

Showing result 1 - 5 of 866 swedish dissertations containing the words technology shift.

2. 1. High dynamic stiffness nano-structured composites for vibration control : A Study of applications in joint interfaces and machining systems

   Author : Qilin Fu; Cornel-Mihai Nicolescu; Per Nylén; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Vibration control; High dynamic stiffness; Metal matrix composite; Nano structures; Plasma enhanced chemical vapour deposition PECVD ; High power impulse magnetron sputtering HiPIMS ; Adiabatic; Machining; Regenerative tool chatter; Production Engineering; Industriell produktion;

   Abstract : Vibration control requires high dynamic stiffness in mechanical structures for a reliable performance under extreme conditions. Dynamic stiffness composes the parameters of stiffness (K) and damping (η) that are usually in a trade-off relationship. This thesis study aims to break the trade-off relationship. READ MORE

4. 2. Magnetooptical properties of dilute nitride nanowires

   Author : Mattias Jansson; Irina A Buyanova; Weimin Chen; Jan Eric Stehr; Hannah Joyce; Linköpings universitet; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Abstract : Nanostructured III-V semiconductors have emerged as one of the most promising materials systems for future optoelectronic applications. While planar III-V compounds are already at the center of the ongoing lighting revolution, where older light sources are replaced by modern white light LEDs, fabricating such materials in novel architectures, such as nanowires and quantum dots, creates new possibilities for optoelectronic applications. READ MORE

5. 3. Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform

   Author : Anton E. O. Persson; Nanoelektronik; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ferroelectricity; ferroelectric FET; ferroelectric tunnel junction; tunnel field effect transistors; HZO; III-V; nanowire;

   Abstract : The discovery of ferroelectricity in CMOS-compatible oxides, such as doped hafnium oxide, has opened new possibilities for electronics by reviving the use of ferroelectric implementations on modern technology platforms. This thesis presents the ground-up integration of ferroelectric HfO2 on a thermally sensitive III-V nanowire platform leading to the successful implementation of ferroelectric transistors (FeFETs), tunnel junctions (FTJs), and varactors for mm-wave applications. READ MORE

6. 4. Tailoring the Optical Response of III-V Nanowire Arrays

   Author : Mahtab Aghaeipour; Håkan Pettersson; Mats-Erik Pistol; Nicklas Anttu; Lars Samuelson; Constance J. Chang-Hasnain; NanoLund: Centre for Nanoscience; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V nanowires; absorption; optical modes; photovoltaics; III-V nanowires; absorption; optical modes; photovoltaics; Fysicumarkivet A:2017:Aghaeipour;

   Abstract : Semiconductor nanowires show a great deal of promise for applications in a wide range of important fields, including photovoltaics, biomedicine, and information technology. Developing these exciting applications is strongly dependent on understanding the fundamental properties of nanowires, such as their optical resonances and absorption spectra. READ MORE

7. 5. Electrical Characterisation of III-V Nanowire MOSFETs

   Author : Markus Hellenbrand; Institutionen för elektro- och informationsteknik; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; TFET; III-V; Nanowire; Hysteresis; Low-Frequency Noise; Random Telegraph Noise; cryogenic; Reliability; Radio Frequency; Small-Signal Model;

   Abstract : The ever increasing demand for faster and more energy-efficient electricalcomputation and communication presents severe challenges for the semiconductor industry and particularly for the metal-oxidesemiconductorfield-effect transistor (MOSFET), which is the workhorse of modern electronics. III-V materials exhibit higher carrier mobilities than the most commonly used MOSFET material Si so that the realisation of III-V MOSFETs can enable higher operation speeds and lower drive voltages than that which is possible in Si electronics. READ MORE