Search for dissertations about: "thesis bjt"

Showing result 1 - 5 of 28 swedish dissertations containing the words thesis bjt.

2. 1. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors

   Author : Hossein Elahipanah; Mikael Östling; Carl-Mikael Zetterling; Anders Hallèn; Adolf Schöner; Tsunenobu Kimoto; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; BJT; high-voltage and ultra-high-voltage; high-temperature; self-aligned Ni-silicide Ni-SALICIDE ; lift-off-free; wafer-scale; current gain; Darlington; Electrical Engineering; Elektro- och systemteknik; Informations- och kommunikationsteknik; Information and Communication Technology;

   Abstract : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. READ MORE

4. 2. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors

   Author : Benedetto Buono; Mikael Östling; Gunnar Malm; Martin Domeij; Lothar Frey; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; diode; simulation; characterization; current gain; on-resistance; breakdown voltage; forward voltage drop; degradation; SRA - ICT; SRA - Informations- och kommunikationsteknik;

   Abstract : The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. READ MORE

5. 3. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors

   Author : Hyung-Seok Lee; Carl-Mikael Zetterling; Tat-Sing Chow; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; current gain; specific on resistance RSP_ON ; breakdown voltage; forward voltage drop; surface recombination; ohmic contact.; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

   Abstract : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. READ MORE

6. 4. High-Temperature Radio Circuits in Silicon Carbide Bipolar Technology

   Author : Muhammad Waqar Hussain; Ana Rusu; Florin Udrea; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; active down-conversion mixer; BJT; EM simulations; silicon carbide; high-temperature; IF amplifier; LTCC; negative resistance oscillator; passives; RF circuits; Informations- och kommunikationsteknik; Information and Communication Technology;

   Abstract : High-temperature electronics find many niche applications in downhole drilling, aviation, automotive and future exploration of inner planets like Venus and Mercury. Past studies have shown the potential of silicon carbide (SiC) electronics for catering these extreme temperature applications. READ MORE

7. 5. Nonlinear transistor models for microwave and millimeterwave circuits

   Author : Lars Bengtsson; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; non-linear model; MESFET; volterra series; HBT; nonlinear simulation; HEMT; BJT; HFET; physical model; power spectrum measurement; harmonic balance;

   Abstract : .... READ MORE