Search for dissertations about: "thesis in bipolar junction transistor"

Showing result 16 - 20 of 25 swedish dissertations containing the words thesis in bipolar junction transistor.

  2. 16. SiC Readout IC for High Temperature Seismic Sensor System

    Author : Ye Tian; Carl-Mikael Zetterling; Ana Rusu; Philip A. Mawby; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; bipolar junction transistor BJT ; integrated circuit IC ; sigma-delta Σ∆ ; data conversion; operational amplifier OpAmp ; VBIC; SPICE Gummel-poon; high-temperature; electromechanical; accelerometer; capacitive sensor; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Over the last decade, electronics operating at high temperatures have been increasingly demanded to support in situ sensing applications such as automotive, deep-well drilling and aerospace. However, few of these applications have requirements above 460 °C, as the surface temperature of Venus, which is a specific target for the seismic sensing application in this thesis. READ MORE

  4. 17. Radiation Hardness of 4H-SiC Devices and Circuits

    Author : Sethu Saveda Suvanam; Anders Hallén; Carl-Mikael Zetterling; Ulrike Grossner; KTH; []
    Keywords : Silicon carbide; radiation hardness; protons; gamma radiation; bipolar junction transistors; aluminium oxide; surface recombination.; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Advances in space and nuclear technologies are limited by the capabilities of the conventional silicon (Si) electronics. Hence, there is a need to explore materials beyond Si with enhanced properties to operate in extreme environments. In this regards, silicon carbide (4H-SiC), a wide bandgap semiconductor, provides suitable solutions. READ MORE

  5. 18. Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications

    Author : Daniel Johannesson; Hans-Peter Nee; Staffan Norrga; Muhammad Nawaz; Alberto Castellazzi; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; Current Filamentation; Device Characterization; Dynamic Avalanche; JTE Structure; Junction Termination Extension Design; SiC BJT; SiC GTO Thyristor; SiC IGBT; SiC MOSFET; SiC PiN Diode; Silicon Carbide; TCAD Simulation; Wide bandgap device; Electrical Engineering; Elektro- och systemteknik;

    Abstract : The increased awareness of the on-going climate change accelerates the electric energy system transformation from fossil-fueled power sources towards systems with larger portions of renewable energy sources. Moreover, the grid infrastructure requires reinforcements to cope with increasing electrical energy demand. READ MORE

  6. 19. On the Low Frequency Noise in Ion Sensing

    Author : Da Zhang; Zhen Zhang; Shili Zhang; Hans Norström; Jörgen Olsson; Michel Calame; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; low frequency noise; ion sensor; ISFET; electrochemical impedance spectroscopy; constant phase element; surface chemistry; CMOS technology; Engineering Science; Teknisk fysik;

    Abstract : Ion sensing represents a grand research challenge. It finds a vast variety of applications in, e.g., gas sensing for domestic gases and ion detection in electrolytes for chemical-biological-medical monitoring. READ MORE

  7. 20. Silicon Nanowire Based Electronic Devices for Sensing Applications

    Author : Qitao Hu; Zhen Zhang; Shi-Li Zhang; Si Chen; Jeehwan Kim; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon nanowire; field-effect transistor; nanoelectromechanical resonator; CMOS-compatible; multiplexed detection; single charge detection; quantum sensing; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Abstract : Silicon nanowire (SiNW) based electronic devices fabricated with a complementary metal-oxide-semiconductor (CMOS) compatible process have wide-range and promising applications in sensing area. These SiNW sensors own high sensitivity, low-cost mass production possibility, and high integration density. READ MORE