Search for dissertations about: "thesis in bipolar junction transistor"

Showing result 21 - 25 of 25 swedish dissertations containing the words thesis in bipolar junction transistor.

  1. 21. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters

    Author : Erik Velander; Hans-Peter Nee; Francesco Iannuzzo; KTH; []
    Keywords : Power semiconductor devices; DC-AC power converters; Silicon carbide; Insulated gate bipolar transistors; P-i-n diodes; Schottky diodes; Traction motors; Power MOSFET; Krafthalvledare; DC-AC kraftomvandlare; kiselkarbid; IGBT; P-i-n dioder; Schottky dioder; traktionsmotorer; Effekt-MOSFET; Electrical Engineering; Elektro- och systemteknik;

    Abstract : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. READ MORE

  2. 22. Near-infrared photodetectors based on Si/SiGe nanostructures

    Author : Anders Elfving; Wei-Xin Ni; Thomas P. Pearsall; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; SiGe; Ge dots; nanostructures; molecular beam epitaxy; photodetector; Semiconductor physics; Halvledarfysik;

    Abstract : Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature. READ MORE

  3. 23. Fabrication and Characterization of 3C- and4H-SiC MOSFETs

    Author : Romain Esteve; Carl-Mikael Zetterling; Tsunenobu Kimoto; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; MOSFETs; Fabrication; Characterization; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; SRA - ICT; SRA - Informations- och kommunikationsteknik;

    Abstract : During the last decades, a global effort has been started towards the implementation of energy efficient electronics. Silicon carbide (SiC), a wide band-gap semiconductor is one of the potential candidates to replace the widespread silicon (Si) which enabled and dominates today’s world of electronics. READ MORE

  4. 24. Developments for Improved Performance Vertical-Cavity Surface Emitting Lasers

    Author : Xingang Yu; Mattias Hammar; Jens A. Tellefsen; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : The vertical-cavity surface-emitting laser (VCSEL) is a type of laser diode that emits light from the surface of the chip from which it is manufactured rather than from a cleaved edge as so far has been common for most telecommunication lasers. VCSEL’s low cost, high power efficiency and low power consumption properties make it a very attractive signal source for many applications such as fiber optical communication, optical interconnects, 3D sensing, absorption spectroscopy, laser printing, etc. READ MORE

  5. 25. Large-Signal Modeling of Microwave Transistors

    Author : Lars Bengtsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; large-signal; HEMT; non-linear models; de-embedding; high-efficiency; class-E amplifier; LDMOS; HBT; HFET; model parameter extraction; microwave transistors;

    Abstract : The development of computer aided design tools for microwave circuit design has increased the interest for accurate transistor models. The circuit complexity has grown as the CAD tools have been improved and the need to predict how non-linear circuits behave has also been increased. READ MORE