Search for dissertations about: "threshold voltage"

Showing result 1 - 5 of 51 swedish dissertations containing the words threshold voltage.

  1. 1. The mechanics in two nanosized systems : Size effect and threshold field

    Author : Martin Olsen; Håkan Olin; Ulf Lindefelt; Sven Öberg; Mittuniversitetet; []
    Keywords : ;

    Abstract : This thesis investigates the mechanics in two nanosized system. Paper I investigates a size effect in a cantilever nanowire affecting its resonance frequency. Paper II reveals a threshold field for the formation of a mound by the diffusion of surface atoms on a substrate under a STM-tip. READ MORE

  2. 2. Electrical Characterization of Integrated InAs Nano-Structures

    Author : Gvidas Astromskas; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; DLTS; Fermi level pinning; epitaxial growth; threshold voltage; nanowire capacitance; overgrowth; Hall mobility; GaSb; InAs;

    Abstract : This thesis analyzes the electrical properties of InAs nano-structures, that are integrated into different materials and geometries. The thesis describes integration related issues of InAs, the epitaxial synthesis of the InAs nano-structures and summarizes experimental techniques for analysis of electrical properties of the integrated structures. READ MORE

  3. 3. The Effects of Lightning on Low Voltage Power Networks

    Author : Raul Montaño; Vernon Cooray; Marcos Rubinstein; Uppsala universitet; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; Electrical engineering; Lightning induced effects; Lightning Electromagnetic fields; Electromagnetic Compatibility EMC ; Surge Protective Devices SPDs ; Low voltage power networks; Elektroteknik; elektronik och fotonik; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Abstract : The present society is highly dependant on complex electronics systems, which have a low damage threshold level. Therefore, there is a high risk of partial or total loss of the system’s electronics when they are exposed to a thunderstorm environment. READ MORE

  4. 4. Ultra-low Voltage Embedded Memories – Design Aspects and a Biomedical Use-case

    Author : Oskar Andersson; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SRAM; CMOS; ultra-low voltage; ultra-low power; subthreshold; standard-cell based memories; atrial fibrillation; SRAM; CMOS; ultra-low voltage; ultra-low power; subthreshold; standard-cell based memories; atrial fibrillation;

    Abstract : As the Internet of Things (IoT) era emerges the need for ultra-low power (ULP) devices is becoming more eminent. A research-proven approach to achieve ULP consumption is to aggressively lower the supply voltage (VDD) below or in the vicinity of the transistor threshold voltage (Vth) and operate the transistors in the subthreshold (sub-Vth) region. READ MORE

  5. 5. Silicon nanowire based devices for More than Moore Applications

    Author : Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
    Keywords : silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. READ MORE