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Showing result 1 - 5 of 34 swedish dissertations matching the above criteria.
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1. Graphene field-effect transistors for high frequency applications
Abstract : Rapid development of wireless and internet communications requires development of new generation high frequency electronics based on new device concepts and new materials. The very high intrinsic velocity of charge carriers in graphene makes it promising new channel material for high frequency electronics. READ MORE
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2. Millimeter and Sub-Millimeter Wave Integrated Active Frequency Down-Converters
Abstract : In recent years, the increasing amount of data transmission, the need for automotiveradars, and standoff imaging for security applications are the main factors that accelerateresearch in the millimeter and sub-millimeter wave frequency ranges. The semiconductorindustries have continuously developed their processes, which have opened upopportunities for manufacturing monolithically integrated circuits up to a few hundredGHz, based on transistor technologies. READ MORE
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3. Linearity Enhancements of Receiver Front-end Circuits for Wireless Communication
Abstract : Technology scaling in advanced CMOS nodes has been very successful in reducing the cost and increasing the operating frequency, however, it has also resulted in reduced transistor intrinsic gain and increased thermal noise coefficient, and most importantly, deteriorated linearity performance. At the same time, advanced wireless communication standards offer ever increasing data rates and pose more stringent requirements on coexistence, leading to very stringent linearity requirements. READ MORE
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4. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications
Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. READ MORE
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5. Radio Frequency InGaAs MOSFETs
Abstract : III-V-based Indium gallium arsenide is a promising channel material for high-frequency applications due to its superior electron mobility property. In this thesis, InGaAs/InP heterostructure radio frequency MOSFETs are designed, fabricated, and characterized. READ MORE