Search for dissertations about: "transfer integration"
Showing result 1 - 5 of
190 swedish dissertations containing the words transfer integration.
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Author : Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
Keywords : silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;
Abstract :
Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. READ MORE
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Author : Stefan Braun; Göran Stemme; Martin A. Schmidt; KTH; []
Keywords : NATURVETENSKAP; NATURAL SCIENCES; Microelectromechanical systems; MEMS; silicon; wafer-level; integration; heterogeneous integration; transfer integration; packaging; assembly; wafer bonding; adhesive bonding; eutectic bonding; release etching; electrochemical etching; microvalves; microactuator; Shape Memory Alloy; SMA; NITINOL; TiNi; NiTi; cold-state reset; bias spring; stress layers; crossbar switch; routing; switch; switch array; electrostatic actuator; S-shaped actuator; zipper actuator; addressing; transfer stamping; blue tape; Computer engineering; Datorteknik;
Abstract :
This thesis presents methods for the wafer-level integration of shape memory alloy (SMA) and electrostatic actuators to functionalize MEMS devices. The integration methods are based on heterogeneous integration, which is the integration of different materials and technologies. READ MORE
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Author : Rasha M Tostensson; Nationalekonomiska institutionen; []
Keywords : SAMHÄLLSVETENSKAP; SOCIAL SCIENCES; Agglomeration; Urban Giants; Sensitivity Analysis; Income Distribution; Comparative Costs; Gravity Equation; Trade Volume; trade in the Middle East and North Africa; Total factor Productivity; Knowledge Transfer; Long-Run Growth; European Integration; Trade barriers.; International commerce; Internationell ekonomi;
Abstract :
The present study is composed of a series of six independent yet related articles treating various aspects of international trade and economic growth. In Chapter two the effects of European Integration (EI) on long-run economic growth is studied. Contrary to earlier empirical results long-run effects of EI are identified. READ MORE
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Author : Wei Mu; Chalmers tekniska högskola; []
Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; transfer; carbon nanomaterials; polymer filling; MWCNTs; interconnect; 3D integration; packaging; graphene; horizontally aligned SWCNTs; through silicon via;
Abstract :
Carbon-based nanomaterials such as carbon nanotubes (CNTs) and graphene, which possess superior electrical, thermal and mechanical properties, have been proposed as alternative materials for future electronics. The proposed applications span from the device level, replacing silicon-based transistors, with single-walled carbon nanotubes (SWCNTs) or graphene, to packaging level using multi-walled carbon nanotubes (MWCNTs) for interconnects. READ MORE
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Author : Andreas C. Fischer; Frank Niklaus; Karl F. Böhringer; KTH; []
Keywords : Microelectromechanical systems; MEMS; Nanoelectromechanical systems; NEMS; silicon; wafer-level; chip-level; through silicon via; TSV; packaging; 3D packaging; vacuum packaging; liquid encapsulation; integration; heterogeneous integration; wafer bonding; microactuators; shape memory alloy; SMA; wire bonding; magnetic assembly; self-assembly; 3D; 3D printing; focused ion beam; FIB;
Abstract :
The development of micro and nano-electromechanical systems (MEMS and NEMS) with entirely new or improved functionalities is typically based on novel or improved designs, materials and fabrication methods. However, today’s micro- and nano-fabrication is restrained by manufacturing paradigms that have been established by the integrated circuit (IC) industry over the past few decades. READ MORE
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