Search for dissertations about: "transistors cmos"

Showing result 1 - 5 of 71 swedish dissertations containing the words transistors cmos.

2. 1. Graphene Hot-electron Transistors

   Author : Sam Vaziri; Mikael Östling; Max Lemme; Suman Datta; KTH; []
   Keywords : Graphene; hot-electron transistors; graphene base transistors; GBT; cross-plane carrier transport; tunneling; ballistic transport; heterojunction transistors; graphene integration; graphene transfer; Informations- och kommunikationsteknik; Information and Communication Technology;

   Abstract : Graphene base transistors (GBTs) have been, recently, proposed to overcome the intrinsic limitations of the graphene field effect transistors (GFETs) and exploit the graphene unique properties in high frequency (HF) applications. These devices utilize single layer graphene as the base material in the vertical hot-electron transistors. READ MORE

4. 2. Microwave CMOS Beamforming Transmitters

   Author : Johan Wernehag; Institutionen för elektro- och informationsteknik; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Beamforming transmitter; CMOS; frequency doubling power amplifier; polyphase filter; phase shifting;

   Abstract : The increase of the consumer electronics market the last couple of decades has been one of the main drivers of IC process technology development. The majority of the ICs are used in digital applications, and for these CMOS is the choice of technology. The urge to squeeze more transistors on to a given area has led to shrinking feature sizes. READ MORE

5. 3. Tunnel Emitter Transistors

   Author : Erik Aderstedt; Chalmers tekniska högskola; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TET; tunneling; siO_{2< sub>}; tunnel emitter transistor; MOS; Ta_{2< sub>O5< sub>}; silicon; high- #954; BICFET; dielectrics;

   Abstract : The Tunnel Emitter Transistor is based on the modulation of the tunnel current in a Metal Oxide Semiconductor (MOS) structure with an ultra-thin oxide layer. The modulation is accomplished by injecting charge to the oxide-semiconductor interface from a third terminal. READ MORE

6. 4. Integrated Variable-Gain and CMOS Millimeter-Wave Amplifiers

   Author : Mohammad Anowar Masud; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; LNA; MMIC; FinFET; CMOS; HEMT; GaAs; WLP; VGA; BCB;

   Abstract : Variable Gain Amplifier finds extensive use in the high frequency demonstrators specially those operating in the millimeter-wave regions and beyond where the incoming RF signal level can have wide variations. To maintain a constant signal level an IF VGA has been designed that can offer a dynamic variation of gain as much as 45 dB together with a high maximum gain and a low noise figure. READ MORE

7. 5. Microwave and millimeter wave CMOS Characterization, modeling, and design

   Author : Mattias Ferndahl; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; load-pull; microwave; large-signal; silicon; characterization; modeling; balun; LSNA; frequency doubler; millimeter wave; power amplifier; CMOS;

   Abstract : The use of CMOS technologies for microwave and millimeter wave applications has recently been made possible as a result of increased transistor performance. The fT and fmax have, for example, passed 100 GHz at the 130 nm node and 200 GHz at the 65 nm node. READ MORE