Search for dissertations about: "tunnel field effect transistors"

Showing result 1 - 5 of 14 swedish dissertations containing the words tunnel field effect transistors.

  2. 1. Tunnel Emitter Transistors

    Author : Erik Aderstedt; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TET; tunneling; siO2< sub>; tunnel emitter transistor; MOS; Ta2< sub>O5< sub>; silicon; high- #954; BICFET; dielectrics;

    Abstract : The Tunnel Emitter Transistor is based on the modulation of the tunnel current in a Metal Oxide Semiconductor (MOS) structure with an ultra-thin oxide layer. The modulation is accomplished by injecting charge to the oxide-semiconductor interface from a third terminal. READ MORE

  4. 2. Vertical III-V Nanowire Tunnel Field-Effect Transistors : A Circuit Perspective

    Author : Gautham Rangasamy; Nanoelektronik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low-Power Electronics; Self-Heating; Steep Slope Devices; Tunnel Field-Effect Transistors; Vertical Nanowire; III-V Semiconductors;

    Abstract : The energy scaling of integrated circuits has reached its limit because the operating voltage of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) based switches has reached its minimum value. MOSFETs are limited by thermionic emission and cannot achieve a subthreshold swing (SS) below 60 mV/decade at room temperature. READ MORE

  5. 3. Graphene Hot-electron Transistors

    Author : Sam Vaziri; Mikael Östling; Max Lemme; Suman Datta; KTH; []
    Keywords : Graphene; hot-electron transistors; graphene base transistors; GBT; cross-plane carrier transport; tunneling; ballistic transport; heterojunction transistors; graphene integration; graphene transfer; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Graphene base transistors (GBTs) have been, recently, proposed to overcome the intrinsic limitations of the graphene field effect transistors (GFETs) and exploit the graphene unique properties in high frequency (HF) applications. These devices utilize single layer graphene as the base material in the vertical hot-electron transistors. READ MORE

  6. 4. Vertical III-V Nanowire Tunnel Field-Effect Transistor

    Author : Elvedin Memisevic; Nanoelektronik; []
    Keywords : Transistor; TFET; Steep slope; Nanowire; III-V materials; HSQ; Vertical; InAs; GaSb; MOSFET;

    Abstract : In this thesis fabrication and optimization of vertical III-V Tunneling Field-Effect transistors was explored. Usage of vertical nanowires, allows for combination of materials with large lattice mismatch in the same nanowire structure. READ MORE

  7. 5. Vertical III-V Nanowire Transistors for Low-Power Electronics

    Author : Abinaya Krishnaraja; Nanoelektronik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metal-oxide-semiconductor field-effect transistor MOSFET ; Steep slope; Tunnel Field-Effect Transistors; Vertical nanowire; III-V materials; semiconducting III-V; InAs; GaSb; InGaAsSb; PMOS; Transistor; Electronics;

    Abstract : Power dissipation has been the major challenge in the downscaling of transistor technology. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have struggled to keep a low power consumption while still maintaining a high performance due to the low carrier mobilities of Si but also due to their inherent minimum inverse subthreshold slope (S ≥ 60 mV/dec) which is limited by thermionic emission. READ MORE