Search for dissertations about: "type inas gasb"

Showing result 1 - 5 of 9 swedish dissertations containing the words type inas gasb.

  1. 1. Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications

    Author : Adam Jönsson; Nanoelektronik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; CMOS; RRAM; III-V; InAs; GaSb; InGaAs; Heterostructure; vertical; nanowire NW ; MOSFET; III-V materials; RRAM; RF; CMOS; InAs; GaSb; InGaAs; heterostructure; Vertical nanowire;

    Abstract : This thesis focuses mainly on the co-integration of vertical nanowiren-type InAs and p-type GaSb MOSFETs on Si (Paper I & II), whereMOVPE grown vertical InAs-GaSb heterostructure nanowires areused for realizing monolithically integrated and co-processed all-III-V CMOS.Utilizing a bottom-up approach based on MOVPE grown nanowires enablesdesign flexibilities, such as in-situ doping and heterostructure formation,which serves to reduce the amount of mask steps during fabrication. READ MORE

  2. 2. Vertical III-V Nanowire Transistors for Low-Power Electronics

    Author : Abinaya Krishnaraja; Nanoelektronik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metal-oxide-semiconductor field-effect transistor MOSFET ; Steep slope; Tunnel Field-Effect Transistors; Vertical nanowire; III-V materials; semiconducting III-V; InAs; GaSb; InGaAsSb; PMOS; Transistor; Electronics;

    Abstract : Power dissipation has been the major challenge in the downscaling of transistor technology. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have struggled to keep a low power consumption while still maintaining a high performance due to the low carrier mobilities of Si but also due to their inherent minimum inverse subthreshold slope (S ≥ 60 mV/dec) which is limited by thermionic emission. READ MORE

  3. 3. Transport in nanowire-based quantum dot systems: Heating electrons and confining holes

    Author : Sven Dorsch; NanoLund: Centre for Nanoscience; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Nanowire; Quantum dot; double quantum dot; Thermoelectric effect; Phonon-assisted transport; GaSb; g-factor; Fysicumarkivet A:2022:Dorsch;

    Abstract : Quantum dots embedded in an electronic circuit allow precise control over the charge transport behaviour of the system: Charge carriers can be individually trapped or precisely shuffled between a series of quantum dots in a strictly sequential manner. This introduces ideal conditions to study fundamental quantum physics and such devices are in the focus of extensive efforts to develop quantum information related applications. READ MORE

  4. 4. On the Growth and Properties of InAs/Ga1-xInxSb Superlattices and Related Materials

    Author : Jöran H. Roslund; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; molecular-beam epitaxy; InAs Ga1-xInxSb superlattices; envelope-function calculations; lattice-mismatched semiconductors; Si-doping of Ga1-xInxSb; type-II superlattices;

    Abstract : InAs/Ga1-xInxSb semiconductor superlattices and their constituent materials have been studied theoretically, grown by molecular-beam epitaxy and characterised by various techniques. InAs/Ga1-xInxSb superlattices are interesting for use in far-infrared detectors because of their narrow band gaps. READ MORE

  5. 5. Novel Materials and Technologies for IR Optoelectronic Applications

    Author : Yuxin Song; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; GaSbBi; dilute bismide; InAs GaSb type-II superlattice; metamorphic; InSbBi; alloy graded buffer; threading dislocation; infrared; molecular beam epitaxy;

    Abstract : This thesis focuses on novel III-V materials (InAs/GaSb type-II superlattices, T2SL, and dilute bismides) and metamorphic growth techniques for infrared optoelectronics all of which may find wide spread applications in telecommunication, energy harvesting and saving, sensing and imaging. Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) photodetectors at the atmospheric windows of 3-5 and 8-12 µm, respectively, are currently dominated by HgCdTe and quantum well infrared photodetectors. READ MORE