Search for dissertations about: "vacancies sic"

Showing result 1 - 5 of 16 swedish dissertations containing the words vacancies sic.

  2. 1. Electron paramagnetic resonance study of defects in SiC

    Author : Patrick Carlsson; Nguyen Tien Son; Erik Janzén; Evan R. Glaser; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : Silicon carbide (SiC) is a wide bandgap semiconductor (energy gap of 3.26 eV and 3.03 eV for 4Hand 6H-SiC, respectively). With outstanding physical and electronic properties, SiC is a promising material for high-power, high-frequency and high-temperature applications. READ MORE

  4. 2. Optical properties of point defects in insulators and of transition metal dichalcogenides

    Author : Christopher Linderälv; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; luminescence quenching; charge transition levels; excitons; transition metal dichalcogenides; monolayer alloys; solid state lighting; color centers; oxygen vacancies; moiré structures; wide band gap oxides;

    Abstract : There is a need for new or modified materials, both to improve current devices and to create novel functionalities. Engineering materials to target specific functionalities requires a better understanding of how microscopic processes impact materials properties. READ MORE

  5. 3. STM studies of epitaxial overlayers formed by metal deposition : Mo on MgO, Ni on SiC and Sn on Si

    Author : Thorbjörn Jemander; Linköpings universitet; []
    Keywords : ;

    Abstract : Magnetron sputtering and molecular beam epitaxy (MBE) have been used to deposit metallic overlayers on semiconducting and insulating materials such as Mo on MgO, Ni on SiC(0001) and Sn on Si(111). The layers have been annealed and characterized with scanning tunneling microscopy (STM), Auger electron spectroscopy (AES), low energy electron diffration (LEED), refiecti ve high energy electron diffraction (RHEED) and atomic force microscopy (AFM). READ MORE

  6. 4. 4H-SiC epitaxy investigating carrier lifetime and substrate off-axis dependence

    Author : Louise Lilja; Peder Bergman; Jawad ul-Hassan; Ulrike Grossner; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : Silicon carbide (SiC) is a wide bandgap semiconductor with unique material properties making it useful for various device applications using high power, high frequency and high temperature. Compared to Si-based electronics, SiC based electronics have an improved energy efficiency. READ MORE

  7. 5. Electron Paramagnetic Resonance Studies of Point Defects in AlGaN and SiC

    Author : Xuan Thang Trinh; Nguyen Tien Son; Erik Janzén; Mary Ellen Zvanut; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Point defects in semiconductor materials are known to have important influence on the performance of electronic devices. For defect control, knowledge on the model of defects and their properties is required. READ MORE