Search for dissertations about: "valence electron concentration"

Showing result 1 - 5 of 28 swedish dissertations containing the words valence electron concentration.

2. 1. Valence Electron Energy Loss Spectroscopy of III-Nitride Semiconductors

   Author : Justinas Pališaitis; Per Persson; Lars Hultman; Jens Birch; Vicki Keast; Linköpings universitet; []
   Keywords : ;

   Abstract : This doctorate thesis covers both experimental and theoretical investigations of the optical responses of the group III-nitrides (AlN, GaN, InN) and their ternary alloys. The goal of this research has been to explore the usefulness of valence electron energy loss spectroscopy (VEELS) for materials characterization of group III-nitride semiconductors at the nanoscale. READ MORE

4. 2. Alloy Design and Optimization of Mechanical Properties of High-Entropy Alloys

   Author : Saad Ahmed Sheikh; Chalmers tekniska högskola; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ductility; topologically closed-pack TCP and geometrically closed-pack GCP phase; alloy design; mechanical properties; High-entropy alloys; refractory high-entropy alloys; valence electron concentration;

   Abstract : High-entropy alloys (HEAs) are described as alloys containing multi-principal elements in equal or close to equal atomic percentage. HEAs are considered as potential structural materials for high-temperature applications; where alloy design and optimization of mechanical properties is extremely critical. READ MORE

5. 3. Electron paramagnetic resonance study of defects in SiC

   Author : Patrick Carlsson; Nguyen Tien Son; Erik Janzén; Evan R. Glaser; Linköpings universitet; []
   Keywords : NATURAL SCIENCES; NATURVETENSKAP;

   Abstract : Silicon carbide (SiC) is a wide bandgap semiconductor (energy gap of 3.26 eV and 3.03 eV for 4Hand 6H-SiC, respectively). With outstanding physical and electronic properties, SiC is a promising material for high-power, high-frequency and high-temperature applications. READ MORE

6. 4. Structural and Electrical Transport Properties of Doped Nd-123 Superconductors

   Author : Shaban Reza Ghorbani; KTH; []
   Keywords : high temperature superconductors; critical temperature; resistivity; thermoelectric power; Hall coefficient; X-ray diffraction; Neutron diffraction; NdBa2Cu3O7-delta; hole concentration; substitution;

   Abstract : It is generally believed that one of the key parameterscontrolling the normal state and superconducting properties ofhigh temperature superconductors is the charge carrierconcentrationpin the CuO2planes.By changing the non-isovalent dopingconcentration on the RE site as well as the oxygen content in(RE)Ba2Cu3O7−δ, an excellent tool is obtained tovary the hole concentration over a wide range from theunderdoped up to the overdoped regime. READ MORE

7. 5. Functional Metal Oxide Materials Deposited by Inkjet Printing Technique

   Author : Yan Wu; Lyubov Belova; Gillian Gehring; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Inkjet printing; photoconductivity; ZnO; Al-ZnO; composite; electron transfer; CdS; field effect transistor; photosensitive; RT do-ferromagnetism; Mn-doped ZnO; MgO; Materials science; Teknisk materialvetenskap;

   Abstract : This thesis presents a comprehensive study of the intrinsic room temperature ferromagnetism in 85 to 100nm thin films produced by in situ deposition of industrially important pristine MgO and ZnO by inkjet printing. It is suggested that the observed long range magnetic order, the so-called do magnetism in these oxides arises from cation vacancies. READ MORE