Search for dissertations about: "vertical cavity tunable"

Found 4 swedish dissertations containing the words vertical cavity tunable.

  2. 1. InP based Micromechanics for Vertical-Cavity Micro-Opto-Electro-Mechanical Systems

    Author : Martin Strassner; KTH; []
    Keywords : MOEMS; vertical-cavity; InP; DBR; epitaxy; semiconductor processing; micromechanics; wavelength tunable devices; long-wavelength;

    Abstract : During the past decade, the amount of transmitted data hasbeen boosted due to an increasing use of the World Wide Web(WWW), video and audio transmissions. In the late 90s, thetraditional technology using twisted copper cables was nolonger capable to provide enough transmission capacity for theconstantly increasing data traffic. READ MORE

  4. 2. Surface-Micromachined Vertical-Cavity Micro-Opto-Electro-Mechanical Devices on InP

    Author : Nicolae Chitica; KTH; []
    Keywords : MOEMS; Optical MEMS; InP; GaInAsP; VCSEL; MOVPE; surface micromachining; tunable devices; vertical cavity devices; air-gap reflectors; III-V micromechanics;

    Abstract : .... READ MORE

  5. 3. Low Phase Noise GaN HEMT Oscillator Design based on High-Q resonators

    Author : Mikael Hörberg; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; resonator coupling; reflection oscillator; MMIC; phase noise; cavity resonator; low-frequency noise; GaN HEMT; MEMS;

    Abstract : The thesis considers the design and optimization of oscillators targeting low phase noise, given boundary conditions from the technology. Crucial technology figures are power capability, RF noise figure, low-frequency noise and the quality factor (Q-factor) of the resonator. READ MORE

  6. 4. Novel architectured, dislocation-free, III-Nitride structures for the next generation optoelectronic devices

    Author : Maryam Khalilian; NanoLund: Centre for Nanoscience; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; III-Nitride materials; heteroepitaxy; 3D growth mode; optoelectronic devices; Fysicumarkivet A:2019:Khalilian;

    Abstract : III-Nitride (III-N) materials are promising building blocks of optoelectronic devices such as light emitting diode and laser diode due to the unique material properties. Furthermore, direct and tunable band gaps of III-N materials enable them to cover the entire visible-UV region of electromagnetic spectrum for device applications. READ MORE