Search for dissertations about: "wide bandgap semiconductor"

Showing result 1 - 5 of 54 swedish dissertations containing the words wide bandgap semiconductor.

  1. 1. Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes

    Author : Sher Azam; Qamar Wahab; Jörgen Olsson; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; SiC; MESFET; GaN; HEMT; Power Amplifiers; Materials science; Teknisk materialvetenskap;

    Abstract : SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. READ MORE

  2. 2. Charge transport in III-V narrow bandgap semiconductor nanowires

    Author : Bekmurat Dalelkhan; NanoLund: Centre for Nanoscience; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; InAs; InSb; InP-InAs; narrow bandgap; spin-orbit interaction; quantum dots; Nanowires; Fysicumarkivet A:2019:Dalelkhan;

    Abstract : This thesis describes charge transport in III-V narrow bandgap semiconductor nanowires. We are particularly interested in quantum transport in InSb, InAs and InP-InAs core-shell nanowires. According to the type of transport mechanism dominating in the devices, this thesis can be divided into four parts. READ MORE

  3. 3. Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices

    Author : Sadia Muniza Faraz; Qamar ul Wahab; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : Wide band gap semiconductors, Zinc Oxide (ZnO), Gallium Nitride (GaN) and Silicon Carbide (SiC) have been emerged to be the most promising semiconductors for future applications in electronic, optoelectronic and power devices. They offer incredible advantages in terms of their optical properties, DC and microwave frequencies power handling capability, piezoelectric properties in building electromechanical coupled sensors and transducers, biosensors and bright light emission. READ MORE

  4. 4. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics

    Author : Juan Colmenares; Hans-Peter Nee; Leon M. Tolbert; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Gallium Nitride; Gate Driver; Harsh Environments; High Efficiency Converter; High Temperature; MOSFETs; Normally- ON JFETs; Reliability; Silicon Carbide; Wide-Band Gap Semiconductors; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. READ MORE

  5. 5. Charge Transport in Single-crystalline CVD Diamond

    Author : Markus Gabrysch; Jan Isberg; Mats Leijon; Milos Nesladek; Uppsala universitet; []
    Keywords : CVD diamond; wide-bandgap semiconductor; single-crystalline diamond; carrier transport; time-of-flight; drift velocity; mobility; compensation; pair-creation; electronic devices; diamond detector; diamond diode;

    Abstract : Diamond is a semiconductor with many superior material properties such as high breakdown field, high saturation velocity, high carrier mobilities and the highest thermal conductivity of all materials. These extreme properties, as compared to other (wide bandgap) semiconductors, make it desirable to develop single-crystalline epitaxial diamond films for electronic device and detector applications. READ MORE