Search for dissertations about: "wide bandgap"

Showing result 1 - 5 of 77 swedish dissertations containing the words wide bandgap.

  1. 1. Wide Bandgap MMIC Technology

    Author : Mattias Sudow; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; AlGaN GaN; SiC MMIC; SiC MESFET; SiC Schottky; Microwave;

    Abstract : Wide bandgap technology for microwave electronics has been an intense area of research during the last decade. With reas of application ranging from base station amplifiers to radar transceivers, this technology has the resources to be the basis for the next generation of high power microwave electronics. READ MORE

  2. 2. Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes

    Author : Sher Azam; Qamar Wahab; Jörgen Olsson; Linköpings universitet; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; Wide bandgap; SiC; MESFET; GaN; HEMT; Power Amplifiers; Materials science; Teknisk materialvetenskap;

    Abstract : SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. READ MORE

  3. 3. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics

    Author : Juan Colmenares; Hans-Peter Nee; Leon M. Tolbert; KTH; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Gallium Nitride; Gate Driver; Harsh Environments; High Efficiency Converter; High Temperature; MOSFETs; Normally- ON JFETs; Reliability; Silicon Carbide; Wide-Band Gap Semiconductors; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. READ MORE

  4. 4. Charge transport in III-V narrow bandgap semiconductor nanowires

    Author : Bekmurat Dalelkhan; NanoLund; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; TEKNIK OCH TEKNOLOGIER; NATURAL SCIENCES; ENGINEERING AND TECHNOLOGY; InAs; InSb; InP-InAs; narrow bandgap; spin-orbit interaction; quantum dots; Nanowires; Fysicumarkivet A:2019:Dalelkhan;

    Abstract : This thesis describes charge transport in III-V narrow bandgap semiconductor nanowires. We are particularly interested in quantum transport in InSb, InAs and InP-InAs core-shell nanowires. According to the type of transport mechanism dominating in the devices, this thesis can be divided into four parts. READ MORE

  5. 5. Microwave power device characterization

    Author : Kristoffer Andersson; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; statistical estimation; self-heating; Silicon Carbide; Gallium Nitride; mixer; thermal resistance; wide bandgap; microwave; error-correction; small-signalmodel;

    Abstract : The first part of the thesis covers work done on device characterizationmethods. A statistical method for estimating small-signal model parametersin FET-models was proposed. A maximum likelihood estimator wasderived and the new method was compared to a standard direct extractiontechnique. READ MORE