Search for dissertations about: "wide bandgap"

Showing result 16 - 20 of 87 swedish dissertations containing the words wide bandgap.

2. 16. High-Temperature Analog and Mixed-Signal Integrated Circuits in Bipolar Silicon Carbide Technology

   Author : Raheleh Hedayati; Carl-Mikael Zetterling; H. Alan Mantooth; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide SiC ; bipolar junction transistor BJT ; high temperature; SiC integrated circuit; Spice Gummel-Poon SGP ; operational amplifier opamp ; negative feedback amplifier; bandgap reference; masterslave comparator; digital-to-analog converter DAC ; analog-to-digital converter ADC ; flash ADC; successive approximation register SAR ADC; Electrical Engineering; Elektro- och systemteknik;

   Abstract : Silicon carbide (SiC) integrated circuits (ICs) can enable the emergence of robust and reliable systems, including data acquisition and on-site control for extreme environments with high temperature and high radiation such as deep earth drilling, space and aviation, electric and hybrid vehicles, and combustion engines. In particular, SiC ICs provide significant benefit by reducing power dissipation and leakage current at temperatures above 300 °C compared to the Si counterpart. READ MORE

4. 17. The synthesis, characterization and device fabrication of ZnO, NiO and their composite nanostructures

   Author : Mazhar Ali Abbasi; Magnus Willander; Maxim Ryzhii; Linköpings universitet; []
   Keywords : Zinc oxide; Nickel Oxide; Composite nanostructures; Wide band gap; Low temperature growth; Luminescence; Photo-detector; Light emitting diode;

   Abstract : Electronics industry has been revolutionized since last few decades because of the fabrication of electronic devices by using nanoscale based materials. But the more innovative feature in the electronic devices is the use of transparent materials, which makes the transparent electronic devices as one of the most interesting research field in nanoscience and nano-technology now a days. READ MORE

5. 18. Window Layer Structures for Chalcopyrite Thin-Film Solar Cells

   Author : Fredrik Larsson; Tobias Törndahl; Jan Keller; Marika Edoff; Daniel Lincot; Uppsala universitet; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CIGS; atomic layer deposition; ALD; thin-film technology; window layer structures; buffer layers; front contacts; metal oxides; ternary compounds; CIGS; tunnfilmssolceller; ALD; tunnfilmsteknik; fönsterlager; buffertlager; framkontakter; metalloxider; ternära föreningar; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

   Abstract : This thesis aims to contribute to the development of improved window layer structures for chalcopyrite thin-film solar cells, with an emphasis on the buffer layer, to assist future reductions of the levelized cost of energy. This is realized by exploring the potential of existing materials and deposition processes, as well as developing new buffer layer processes based on atomic layer deposition (ALD). READ MORE

6. 19. Growth, characterization and processing of III-nitride semiconductors

   Author : Fredrik Fälth; Chalmers tekniska högskola; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES;

   Abstract : The III-nitride semiconductor materials have wide direct bandgap ranging from 6.2 eV (AlN); through 3.4 eV (GaN) to 0.65 eV (InN). READ MORE

7. 20. Towards Novel AlGaN-Based Light Emitters

   Author : Martin Stattin; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AlGaN; light emitting diode; deep ultraviolet; III-Nitrides; near infrared; quantum cascade laser;

   Abstract : The unique properties of the AlGaN semiconductors make them a suitable choice for optoelectronic devices at both short and long wavelengths, based on interband and intersubband transitions, respectively. What sets AlGaN apart from other wide-bandgap semiconductors is the possibility to obtain both p- and n-type conductivity as well as the direct bandgap. READ MORE