Search for dissertations about: "wide bandgap"
Showing result 21 - 25 of 87 swedish dissertations containing the words wide bandgap.
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21. Copper germanide schottky contacts to silicon and electrically active defects in n-type 6H-SiC and 4H-SiC epitaxial layers
Abstract : Metallization for contacts to silicon devices presents amajor challenge as the linewidths are further reduced into thesub-micron regime. Copper germanide due to its relatively lowroom temperature resistivity ( ~ 10 µΩ - cm) has beenexamined as a potential contact metallixation. READ MORE
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22. Design and Construction of Low-Temperature Scanning Tunnelling Microscope for Spectroscopy
Abstract : This thesis discusses some of the fundamental requirements needed to be fulfilled when constructing a low temperature scanning tunnelling microscope (STM). Three different designs, two non-vacuum and one ultra-high vacuum (UHV), based on either inertial-mass or novel stepper motor principles are presented. READ MORE
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23. A Quantum Chemical Exploration of SiC Chemical Vapor Deposition
Abstract : SiC is a wide bandgap semiconductor with many attractive properties. It hasattracted particular attentions in the areas of power and sensor devices as wellas biomedical and biosensor applications. This is owing to its properties suchas large bandgap, high breakdown electric field, high thermal conductivitiesand chemically robustness. READ MORE
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24. Radiation Hardness of 4H-SiC Devices and Circuits
Abstract : Advances in space and nuclear technologies are limited by the capabilities of the conventional silicon (Si) electronics. Hence, there is a need to explore materials beyond Si with enhanced properties to operate in extreme environments. In this regards, silicon carbide (4H-SiC), a wide bandgap semiconductor, provides suitable solutions. READ MORE
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25. GaN, AlGaN, GaNAs and Related Heterostructures Grown by Molecular Beam Epitaxy
Abstract : This work deals with growth and characterization of III-nitrides and related heterostructures as well as GaNAs alloys grown by plasma assisted molecular beam epitaxy (MBE). The III-nitrides belong to the wide bandgap semiconductors due to their large energy bandgap spanning from 1.9 to 6.2 eV. READ MORE