Search for dissertations about: "wrap gate"

Found 3 swedish dissertations containing the words wrap gate.

  2. 1. Growth, Physics, and Device Applications of InAs-based Nanowires

    Author : Linus Fröberg; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; field effect transistors; Low-dimensional structures; nanowires; chemical beam epitaxy; heterostructures; III-V; InP; InAs; quantum dots; gate all-around; wrap gate;

    Abstract : This thesis is based on three different projects: 1) the epitaxial growth of nanowires using chemical beam epitaxy, 2) the study of electron transport through quantum dots and multiple quantum dots in nanowires at low temperature, and 3) the development of wrap gated nanowire field effect transistors. In the first part, a method of studying the diffusion of the source material on the substrate surface was developed. READ MORE

  4. 2. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

    Author : Jun Wu; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

    Abstract : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. READ MORE

  5. 3. Studies of Nanowire Devices Enabled by Advanced Nanofabrication

    Author : Gustav Nylund; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Fysicumarkivet:2015:Nylund;

    Abstract : This thesis explores the possibility of using advanced device geometries and heterostructure engineering to manipulate, control, and study the electrical and optical properties of semiconductor nanowires. The first part of the thesis investigates the use of different gate-all-around architectures for creating new types of gate-controlled nanowire devices, primarily intended for fundamental studies of semiconductor physics. READ MORE