Search for dissertations about: "zinc-blende"

Showing result 1 - 5 of 26 swedish dissertations containing the word zinc-blende.

  2. 1. Atomic Scale Characterization of III-V Nanowire Surfaces

    Author : Johan Knutsson; NanoLund: Centre for Nanoscience; []
    Keywords : III–V semiconductor materials; nanowire; surface; scanning tunneling microscopy; wurtzite; zinc blende; scanning tunneling spectroscopy; Fysicumarkivet A:2017:Knutsson;

    Abstract : This dissertation focus on the atomic-scale characterization of the surface properties and electronic structure of III–V semiconductor nanowires (NWs). Since the early 2000s, the fabrication and characterization of III–V NWs has been a very significant topic within material science due to their potential for applications in lighting, energy harvesting, and electronics. READ MORE

  4. 2. Studies of the electronic structure of some clean and As-covered semiconductor surfaces using angle- resolved photoelectron spectroscopy

    Author : Hua Qu; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; crystal structure; LCAO; Surface electronic structure; diamond; LEED; zinc-blende;

    Abstract : .... READ MORE

  5. 3. Optical Studies of Polytypism in GaAs Nanowires

    Author : Neimantas Vainorius; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Photoluminescence; Raman scattering; Polytypism; Quantum confinement; GaAs nanowires; Fysicumarkivet A:2017:Vainorius;

    Abstract : Semiconductor nanowires are often regarded as having potential to be building blocks for novel applications. Their geometry allows defect-free combinations of materials that have a high degree of lattice mismatch. III-V semiconductor nanowires can also be grown in the wurtzite crystal phase, which is not stable in bulk material or thin films. READ MORE

  6. 4. From understanding to realizing novel III-Sb materials via nanowires

    Author : Luna Namazi; NanoLund: Centre for Nanoscience; []
    Keywords : Fysicumarkivet A:2018:Namazi;

    Abstract : Due to their unique physical and material properties, III-Sb nanowires are considered good candidates for future devices, and test beds for understanding fundamental physics. Synthesizing these nanowires however is associated with certain challenging aspects, which are generally not present for other III-V nanowires, demanding the need for in depth investigations. READ MORE

  7. 5. Molecular Beam Epitaxy and Characterisation of GaN-compounds on GaAs(001) and Sapphire(0001)

    Author : Otto Zsebök; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AlGaN GaN HFET; plasma-assisted MBE; GaNAs; nitridation damage; InGaN; group-III nitrides; GaN; AlGaN; phase-separation;

    Abstract : The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures have attracted much attention due to their potential for applications in high-power, high-frequency electronic and optoelectronic devices. The optical emission range of the GaN-based alloys cover the whole visible range from near infrared (IR) to ultraviolet (UV). READ MORE