Optical Characterization of III-Nitride and II-V Semiconductor Nanowires

Abstract: The optical properties of III-V semiconductor nanowires for optical devices have been investigated by photoluminescence spectroscopy, cathodoluminescence spectroscopy and cathodoluminescence imaging. The material systems that have been studied include the nitrides (InN, GaN and AlN) and ternaries, and a few common phosphides and arsenides. Due to the different optical properties of the materials, they have different possible emission ranges and applications, from ultra violet and visible to infrared light and from water purification and illumination to optical communication. The different material systems have been investigated in separate projects, but together they in principle share the same goal, establishing the foundation of completely new, cheap, nanowirebased LEDs with high external quantum efficiencies.