Block Copolymer Nanolithography for Sub-50 nm Structure Applications

Abstract: As high technology device patterns are continuing to move towards decreasing critical dimensions and increasing pattern density, there is a need for lithography to move in the same direction. Block copolymer (BCP) lithography is a promising technique, which has single digit nanometer resolution, has a pattern periodicity of about 7-200 nm, and easily scales up to large area at a low cost. The use of BCPs with high immiscibility of constituent blocks, so-called high-Chi material, enables smaller pattern dimensions and is therefore of special interest. However, for lithography techniques to be applicable, also integration into existing nanofabrication processes is necessary. Furthermore, development of techniques to perform sub 10 nm pattern transfer is an enabler for continued device development. This dissertation first provides an overview of the BCP lithography field, to thereafter study the selective infiltration synthesis of alumina into the maltoheptaose block in high-Chi poly(styrene)-block-maltoheptaose of 12 nm pattern periodicity. The infiltration was studied using neutron reflectometry, and a subsequent sub-10 nm pattern transfer was performed into silicon. Also, it studies the process of surface reconstruction of high-Chi poly(styrene)-block-poly(4-vinylpyridine) of 50 nm pattern periodicity, more specifically the effect of time and temperature on pore diameter. Furthermore, pattern transfer of the surface reconstructed BCP film into silicon nitride, and selective area metal-organic vapor phase epitaxy (SA-MOVPE) of indium arsenide vertical nanowires on a silicon platform, using directed self-assembly is demonstrated. By directing the self-assembly along different crystal directions of the substrate, two vertical nanowire configurations were grown. Demonstration of gate all-around stack deposition of oxide/metal to the densely packed nanowire configurations was thereafter made. The results have contributed to the knowledge on BCP lithography and pattern transfer in the sub 50 nm regime, enabling new approaches for applications such as vertical nanowire, or fin transistors.