Gallium nitride templates and its related materials for electronic and photonic devices

University dissertation from Stockholm : KTH

Author: Thomas Aggerstam; Kth.; [2008]

Keywords: TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; heteroepitaxy of GaN; BGaAlN; Fe doped GaN; HEMT; carrier capture cross section; intersubband transition modulator; TECHNOLOGY Materials science; TEKNIKVETENSKAP Teknisk materialvetenskap;

Abstract:

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