Electrical Transport in Nanoparticle Thin Films of Gold and Indium Tin Oxide

Abstract: Electrical transport properties of nanoparticle gold films made by the gas evaporation method were analysed using resistivity measurements. Low temperature electrical transport measurements showed a cross-over from a temperature range dominated by inelastic scattering to a temperature range dominated by elastic scattering, presumably by grain boundaries. This cross-over shifted towards lower temperatures with increasing grain size. High temperature in-situ electrical transport measurements were carried out in isothermal annealing experiments. Four types of samples, prepared at different deposition rates, were analysed. Samples prepared at low deposition rate displayed a higher thermal stability than samples prepared at high deposition rate. A relaxation model was fitted to the in-situ electrical transport data. The model included an activation energy, which was found to increase with increasing annealing temperature for all samples, thus pointing at the presence of pinning mechanisms in the samples.Optical properties of nanoparticle gold films were investigated in the 0.3 < λ < 12.5 µm wavelength range. A model taking grain boundary scattering into account was successfully fitted to the experimental data and it was shown that the infrared reflectance decreased with decreasing grain size as a consequence of increased grain boundary scattering.Nanoparticle tin-doped indium oxide films were made by spin-coating a dispersion containing the nanoparticles onto a substrate. The tin-doped indium oxide particles were prepared by a wet-chemical method. Optical properties were investigated in the 0.3 < λ < 30 µm wavelength range by reflectance and transmittance measurements. Effective medium theory was employed in the analyses of the optical data and information regarding film porosity and charge carrier concentration and mobility within the individual nanoparticles was obtained. It was found that ionized impurity scattering of the conduction electrons dominates within the particles. The temperature-dependent film resistivity was found to be governed by insulating barriers between clusters containing a large number of nanoparticles, thereby giving a negative temperature coefficient of resistivity.