Capacitance Spectroscopy of Point Defects in Silicon and Silicon Carbide

University dissertation from Kista : Mikroelektronik och informationsteknik

Author: Denny Åberg; Kth.; [2001]

Keywords: capacitance spectrocopy; deep levels; deep level transient spectroscopy; thermal donors; thermal double donors; ultra shallow thermal donors; chemical kinetics; silicon carbide; ion implantation; implantation induced defects; implantation induced pas;

Abstract:

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