Initial growth of GaN on sapphire and growth of AlGaN on GaN by molecular beam epitaxy

University dissertation from Chalmers University of Technology

Author: Stefan Davidsson; Chalmers Tekniska Högskola.; Chalmers University Of Technology.; [2002]

Keywords: TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-nitride; GaN; AlN; AlGaN; epitexial growth; molecular beam epitaxy; MBE; two dimensional electron gas; 2DEG; heterostructure field effect transistor; HFET;

Abstract:

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