Search for dissertations about: "microwave devices"

Showing result 1 - 5 of 97 swedish dissertations containing the words microwave devices.

  1. 1. Silicon Carbide Microwave Devices

    Author : Joakim Eriksson; Chalmers University of Technology; []
    Keywords : SBD; high-power microwave devices; Silicon Carbide; diode mixer; wide band gap devices; physical simulations; resistive mixer; microwave devices; MESFET; Schottky diode;

    Abstract : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. READ MORE

  2. 2. Nonlinear Characterization of Wideband Microwave Devices and Dispersive Effects in GaN HEMTs

    Author : Sebastian Gustafsson; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; large-signal; dispersive effects; electron trapping; thermal coupling; HEMT; GaN; microwave; wideband;

    Abstract : Measurements play a key role in the development of microwave hardware as they allow engineers to test and verify the RF performance on a system, circuit, and component level. Since modern cellular standards employ complex modulation formats with wider signal bandwidths to cope with the growing demand of higher datarates, nonlinear characterization using wideband stimuli is becoming increasingly important. READ MORE

  3. 3. Determining and Optimizing the Current and Magnetic Field Dependence of Spin-Torque and Spin Hall Nano-Oscillators : Toward Next-Generation Nanoelectronic Devices and Systems

    Author : Seyed Amir Hossein Banuazizi; Johan Åkerman; Erik Wahlström; KTH; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanoelectronics; spintronics; nanomagnetism; ferromagnetic materials; microwave oscillators; magnetization dynamics; spin waves; giant magneto-resistance; spin Hall effect; spin-torque nano-oscillators; spin Hall nano-oscillators; numerical modeling; electrical characterization; microwave characterization; magnetic force microscopy.; Physics; Fysik; Materials Science and Engineering; Teknisk materialvetenskap; Informations- och kommunikationsteknik; Information and Communication Technology; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Spin-torque and spin Hall nano-oscillators are nanoscale devices (about 100 nm) capable of producing tunable broadband high-frequency microwave signals ranging from 0.1 GHz to over 65 GHz that several research groups trying to reach up to 200 - 300 GHz. READ MORE

  4. 4. High Frequency Microwave and Antenna Devices based on Transformation Optics and Glide-Symmetric Metasurfaces

    Author : Mahsa Ebrahimpouri; Oscar Quevedo-Teruel; Nader Engheta; KTH; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Glide Symmetry; Transformation Optics; Lens Antennas; High Frequency; Microwave Devices; Electrical Engineering; Elektro- och systemteknik;

    Abstract : The new generation of wireless communication networks intends to support data rate of Gbit/s. One solution to make it possible is to move upwards in frequency range to employ the unused spectrum in mm-wave frequencies. READ MORE

  5. 5. Microwave and millimeter wave CMOS Characterization, modeling, and design

    Author : Mattias Ferndahl; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; load-pull; microwave; large-signal; silicon; characterization; modeling; balun; LSNA; frequency doubler; millimeter wave; power amplifier; CMOS;

    Abstract : The use of CMOS technologies for microwave and millimeter wave applications has recently been made possible as a result of increased transistor performance. The fT and fmax have, for example, passed 100 GHz at the 130 nm node and 200 GHz at the 65 nm node. READ MORE